ã Diodes Incorporated. 1N SCHOTTKY BARRIER SWITCHING DIODE. Features. ·. Low Forward Voltage Drop. ·. Guard Ring Construction for Transient. 1N and 1N Vishay Semiconductors formerly General Semiconductor. Document Number 8-May 1. Schottky Diodes. 1N datasheet, 1N pdf, 1N data sheet, datasheet, data sheet, pdf, BKC International Electronics, 60 V, mW silicon schottky barrier diode.

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Selectors Simulators and Models. The low forward datashfet drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling. No commitment taken to design or produce NRND: Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. Distributor Name Region Stock Min.

1N – 60 V, 15 mA axial RF and Ultrafast Switching Signal Schottky Diode – STMicroelectronics

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The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling. Product is in volume production. No commitment taken to produce Proposal: The low forward voltage drop and fast switching make it ideal for protection o. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. Support Center Complete list and gateway to support services and resource pools.

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The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swi. ST Code of Conduct Blog.

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(PDF) 1N6263 Datasheet download

The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering. Getting started with eDesignSuite. Marketing proposal for customer feedback. IoT for Smart Things. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, b. Support Center Video Center. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,bi. The low forward voltage drop and fast switching make it ideal for protection of MO.

Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Please contact our sales support for information on specific devices. Menu Products Explore our product portfolio.

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Small Signal Schottky Diodes Features For general purpose applications Metal silicon schottky barrier device which is protected dwtasheet a PN junction guard ring.

Product is in volume production only to support customers ongoing production.

Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. For general purpose applications 2. Not Recommended for New Design. Free Sample Add to cart. Product is in design feasibility stage. Tools and Software Development Tools. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and.

Product is in volume production 0. Product is in design stage Target: For general purpose applications. Tj max limit of Schottky diodes. Media Subscription Media Contacts. Computers and Peripherals Data Datasehet. Product is under characterization.