2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N
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New Jersey Semiconductor 2NN datasheet pdf
Please contact sales office if device weight is not available. Vertical DMOS FETs are 2n6661 suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
We at Microchip are committed to continuously improving the code protection features of our products. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.
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2N Datasheet(PDF) – Seme LAB
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2N6661 Datasheet PDF
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. In Production View Datasheet Features: Microchip Technology Incorporated in the U.
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Only show products with samples. Code protection is constantly evolving. Information contained in this publication regarding device. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain. KG, a subsidiary of Microchip Technology Inc. It is your responsibility to ensure that your application dztasheet with your specifications.